收藏本站

DMN601VK
Package Outline Dimensions
A
SOT-563
B C
Dim
A
B
C
Min
0.15
1.10
1.55
Max
0.30
1.25
1.70
Typ
0.20
1.20
1.60
K
G
D
M
D
G
H
K
L
M
0.90
1.50
0.55
0.10
0.10
0.50
1.10
1.70
0.60
0.30
0.18
1.00
1.60
0.60
0.20
0.11
All Dimensions in mm
H
Suggested Pad Layout
E
E
L
Dimensions Value (in mm)
Z
G
X
Y
2.2
1.2
0.375
0.5
Z
G
C
C
E
1.7
0.5
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN601VK
Document number: DS30655 Rev. 4 - 2
4 of 4
www.diodes.com
October 2007
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN601WK-7 MOSFET N-CH 60V 300MA SC70-3
DMN6040SFDE-7 MOSF N CH 60V 5.3A U DFN2020-6E
DMN6040SSD-13 MOSFET N CH 60V 5A SO-8
DMN6040SSS-13 MOSFET N CH 60V 5.5A SO-8
DMN6040SVT-7 MOSFET N CH 60V 5A TSOT26
DMN6066SSD-13 MOSFET 2N-CH 60V 3.3A SO8
DMN6066SSS-13 MOSFET N-CH 60V 3.7A SO8
DMN6068LK3-13 MOSFET N-CH 60V 6A DPAK
相关代理商/技术参数
DMN601WK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN601WK_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN601WK-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6040SFDE-7 功能描述:MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6040SK3-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 41V-60V TO252 T&R 2.5K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH 60V 20A TO252 制造商:Diodes Incorporated 功能描述:MOSFET N-channel 60V 20A TO-252 D2PAK
DMN6040SSD-13 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6040SSS-13 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6040SVT-7 功能描述:MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube